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00154775 120N6 7320000 100M1 C102M HEF40 S2222A 2412E
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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2078
DESCRIPTION *Collector-Emitter Voltage:VCER= 75V(Min) ;RBE=150 *Collector Current:IC=3A
APPLICATIONS *27MHz RF Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCER VEBO IC ICM PARAMETER Collector-Base Voltage VALUE 80
UNIT V
Collector-Emitter Voltage RBE=150 Emitter-Base Voltage
Collector Current-Continuous Collector Current-Peak
w w
scs .i w
75 5 3 5 1.2 10 150 -55~150
.cn mi e
V V A A W
Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=50 TJ Tstg Junction Temperature Storage Temperature Range

isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2078
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC=0.1mA; IB= 0
80
V
V(BR)CER
Collector-Emitter Breakdown Voltage
IC=0.1mA; RBE=150
75
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=0.1mA; IC= 0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC=1A; IB= 0.1A
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=1A; IB= 0.1A
1.2
V
ICBO
Collector Cutoff Current
VCB= 40V ; IE= 0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
COB
Output Capacitance
fT
Current-Gain--Bandwidth Product
w w
D 60-120
scs .i w
VEB= 4V; IC= 0
IC= 500mA ; VCE= 5V
.cn mi e
25 45 100 4.0 60
10
A
10
A
200
IE= 0; VCB= 10V; ftest= 1MHz
60
pF
IC= 500mA; VCE= 10V
MHz
PO
Output Power VCC= 12V;Pin=0.2W, f=27MHz
W
Power Efficiency
%
hFE Classifications B 25-50 C 40-80 E 100-200
isc Websitewww.iscsemi.cn
2


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